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- Series :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,630
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CH 20V 7.9A 6-TSOP | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.7W (Ta), 2.7W (Tc) | N-Channel | - | 20V | 7.9A (Tc) | 28 mOhm @ 5.1A, 4.5V | 1V @ 250µA | 18nC @ 8V | 666pF @ 10V | 1.8V, 4.5V | ±8V | |||
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2,197
Ships today + free overnight shipping
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Nexperia USA Inc. | MOSFET P-CH 20V 7.9A 8-SOIC | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 5W (Tc) | P-Channel | - | 20V | 7.9A (Tc) | 50 mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 10nC @ 4.5V | 1020pF @ 20V | 4.5V | ±12V |