4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF6636TR1PBF
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RFQ
670
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Infineon Technologies MOSFET N-CH 20V 18A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric ST DIRECTFET™ ST 2.2W (Ta), 42W (Tc) N-Channel - 20V 18A (Ta), 81A (Tc) 4.5 mOhm @ 18A, 10V 2.45V @ 250µA 27nC @ 4.5V 2420pF @ 10V 4.5V, 10V ±20V
IRF6636TR1
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RFQ
3,905
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Infineon Technologies MOSFET N-CH 20V 18A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric ST DIRECTFET™ ST 2.2W (Ta), 42W (Tc) N-Channel - 20V 18A (Ta), 81A (Tc) 4.5 mOhm @ 18A, 10V 2.45V @ 250µA 27nC @ 4.5V 2420pF @ 10V 4.5V, 10V ±20V
IRF6636
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RFQ
3,861
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 20V 18A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric ST DIRECTFET™ ST 2.2W (Ta), 42W (Tc) N-Channel - 20V 18A (Ta), 81A (Tc) 4.5 mOhm @ 18A, 10V 2.45V @ 250µA 27nC @ 4.5V 2420pF @ 10V 4.5V, 10V ±20V
IRF6636TRPBF
Per Unit
$1.63
RFQ
3,914
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 20V 18A DIRECTFET HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric ST DIRECTFET™ ST 2.2W (Ta), 42W (Tc) N-Channel - 20V 18A (Ta), 81A (Tc) 4.5 mOhm @ 18A, 10V 2.45V @ 250µA 27nC @ 4.5V 2420pF @ 10V 4.5V, 10V ±20V
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