Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Vgs (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIA811DJ-T1-E3
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RFQ
2,723
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Vishay Siliconix MOSFET P-CH 20V 4.5A SC70-6 LITTLE FOOT® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SC-70-6 Dual PowerPAK® SC-70-6 Dual 1.9W (Ta), 6.5W (Tc) P-Channel Schottky Diode (Isolated) 20V 4.5A (Tc) 94 mOhm @ 2.8A, 4.5V 1V @ 250µA 13nC @ 8V 355pF @ 10V 1.8V, 4.5V ±8V
TSM301K12CQ RFG
Per Unit
$0.68
RFQ
3,726
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Taiwan Semiconductor Corporation MOSFET P-CH 20V 4.5A 6-TDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-TDFN (2x2) 6.5W (Tc) P-Channel - 20V 4.5A (Ta) 94 mOhm @ 2.8A, 4.5V 500mV @ 250µA 4.5nC @ 4.5V 5.2pF @ 6V 1.8V, 4.5V ±12V
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