Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
DMN2005UFG-13
Per Unit
$0.72
RFQ
1,218
Ships today + free overnight shipping
Diodes Incorporated MOSFET N-CH 20V 18.1A POWERDI-8 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 1.05W (Ta) N-Channel 20V 18.1A (Tc) 4.6 mOhm @ 13.5A, 4.5V 1.2V @ 250µA 164nC @ 10V 6495pF @ 10V 2.5V, 4.5V ±12V
DMN2005UFG-7
Per Unit
$0.72
RFQ
3,024
Ships today + free overnight shipping
Diodes Incorporated MOSFET N-CH 20V 18.1A POWERDI-8 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 1.05W (Ta) N-Channel 20V 18.1A (Tc) 4.6 mOhm @ 13.5A, 4.5V 1.2V @ 250µA 164nC @ 10V 6495pF @ 10V 2.5V, 4.5V ±12V
DMN2005UPS-13
Per Unit
$1.02
RFQ
1,187
Ships today + free overnight shipping
Diodes Incorporated MOSFET N-CH 20V 20A POWERDI5060 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 1.5W (Ta) N-Channel 20V 20A (Ta), 100A (Tc) 4.6 mOhm @ 13.5A, 4.5V 1.2V @ 250µA 142nC @ 10V 5337pF @ 10V 2.5V, 4.5V ±12V
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