- Manufacture :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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831
Ships today + free overnight shipping
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Rohm Semiconductor | MOSFET P-CHANNEL 20V 30A 8HSMT | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) | 20W (Tc) | P-Channel | 20V | 30A (Tc) | 6.7 mOhm @ 15A, 4.5V | 1.2V @ 1mA | 60nC @ 4.5V | 4800pF @ 10V | 4.5V | ±8V | |||
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2,793
Ships today + free overnight shipping
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Diodes Incorporated | MOSFET P-CH 20V 18A PWRDI3333-8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 2.3W (Ta) | P-Channel | 20V | 18A (Ta), 40A (Tc) | 6.7 mOhm @ 15A, 4.5V | 1V @ 250µA | 156nC @ 10V | 5940pF @ 10V | 1.8V, 4.5V | ±10V |
