Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Vgs (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RF4C050APTR
GET PRICE
RFQ
2,428
Ships today + free overnight shipping
Rohm Semiconductor MOSFET P-CH 20V 10A 8HUML - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerUDFN HUML2020L8 2W (Ta) P-Channel 20V 10A (Ta) 26 mOhm @ 5A, 4.5V 1V @ 1mA 55nC @ 4.5V 5500pF @ 10V 1.8V, 4.5V -8V
TSM260P02CX6 RFG
Per Unit
$0.55
RFQ
3,900
Ships today + free overnight shipping
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 20V 6.5A SOT26 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 1.56W (Tc) P-Channel 20V 6.5A (Tc) 26 mOhm @ 5A, 4.5V 1V @ 250µA 19.5nC @ 4.5V 1670pF @ 15V 1.8V, 4.5V ±10V
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