- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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- Drive Voltage (Max Rds On, Min Rds On) :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,318
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CH 20V 6.1A SC70-6 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) | 1.5W (Ta), 2.8W (Tc) | N-Channel | - | 20V | 6.1A (Tc) | 49 mOhm @ 4.6A, 4.5V | 950mV @ 250µA | 10nC @ 5V | 530pF @ 10V | 1.8V, 4.5V | ±8V | ||
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3,393
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.5A VS-6 | U-MOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 20V | 5.5A (Ta) | 40 mOhm @ 2.8A, 4.5V | 1V @ 1mA | 10nC @ 5V | 700pF @ 10V | 1.5V, 4.5V | ±8V |
