- Manufacture :
- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,374
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Vishay Siliconix | MOSFET P-CH 20V 9.8A 1212-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.5W (Ta) | P-Channel | - | 20V | 9.8A (Ta) | 10.8 mOhm @ 15.3A, 4.5V | 1V @ 450µA | 44nC @ 4.5V | - | 1.8V, 4.5V | ±8V | ||
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1,309
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Vishay Siliconix | MOSFET P-CH 20V 9.8A 1212-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.5W (Ta) | P-Channel | - | 20V | 9.8A (Ta) | 10.8 mOhm @ 15.3A, 4.5V | 1V @ 450µA | 44nC @ 4.5V | - | 1.8V, 4.5V | ±8V | ||
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2,019
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Infineon Technologies | MOSFET N-CH 20V 110A D2PAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 120W (Tc) | N-Channel | - | 20V | 110A (Tc) | 6 mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | 4.5V, 10V | ±20V |
