- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,403
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Infineon Technologies | MOSFET N-CH 20V 6.5A 6TSOP | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(SOT23-6) | 2W (Ta) | N-Channel | - | 20V | 6.5A (Ta) | 30 mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | 1310pF @ 15V | 2.5V, 4.5V | ±12V | ||
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1,379
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Infineon Technologies | MOSFET N-CH 20V 6.5A 6-TSOP | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(SOT23-6) | 2W (Ta) | N-Channel | - | 20V | 6.5A (Ta) | 30 mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | 1310pF @ 15V | 2.5V, 4.5V | ±12V | ||
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3,457
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Infineon Technologies | MOSFET N-CH 20V 6.5A 6-TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(SOT23-6) | 2W (Ta) | N-Channel | - | 20V | 6.5A (Ta) | 30 mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | 1310pF @ 15V | 2.5V, 4.5V | ±12V | |||
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1,262
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Infineon Technologies | MOSFET N-CH 20V 6.5A MICRO8 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.8W (Ta) | N-Channel | - | 20V | 6.5A (Ta) | 30 mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | 1310pF @ 15V | 2.5V, 4.5V | ±12V |
