Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NTLJS3113PT1G
Per Unit
$0.61
RFQ
2,667
Ships today + free overnight shipping
ON Semiconductor MOSFET P-CH 20V 3.5A 6-WFDN µCool™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 700mW (Ta) P-Channel 20V 3.5A (Ta) 40 mOhm @ 3A, 4.5V 1V @ 250µA 15.7nC @ 4.5V 1329pF @ 16V 1.5V, 4.5V ±8V
PMV50UPE,215
Per Unit
$0.45
RFQ
783
Ships today + free overnight shipping
Nexperia USA Inc. MOSFET P-CH 20V 3.2A TO-236AB - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 500mW (Ta) P-Channel 20V 3.2A (Ta) 66 mOhm @ 3.2A, 4.5V 900mV @ 250µA 15.7nC @ 4.5V 24pF @ 10V 1.8V, 4.5V ±8V
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