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- Series :
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- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,155
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NXP USA Inc. | MOSFET N-CH 20V 6.6A 6DFN | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-DFN2020MD (2x2) | 1.7W (Ta), 12.5W (Tc) | N-Channel | 20V | 6.6A (Ta) | 25 mOhm @ 6.6A, 4.5V | 1V @ 250µA | 7.1nC @ 4.5V | 460pF @ 10V | 1.8V, 4.5V | ±8V | ||
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2,278
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Rohm Semiconductor | NCH 20V 3.5A POWER MOSFET | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | TUMT6 | 1W (Ta) | N-Channel | 20V | 3.5A (Ta) | 43 mOhm @ 3.5A, 4.5V | 1V @ 1mA | 5.7nC @ 4.5V | 460pF @ 10V | 1.5V, 4.5V | ±10V | |||
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2,896
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Rohm Semiconductor | MOSFET N-CH 20V 3.5A TUMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | TUMT6 | 320mW (Ta) | N-Channel | 20V | 3.5A (Ta) | 43 mOhm @ 3.5A, 4.5V | 1V @ 1mA | 5.7nC @ 4.5V | 460pF @ 10V | 1.5V, 4.5V | ±10V | |||
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2,117
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Rohm Semiconductor | MOSFET P-CHANNEL 20V 3.5A TSMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 1W (Tc) | P-Channel | 20V | 3.5A (Ta) | 59 mOhm @ 3.5A, 4.5V | 1.2V @ 1mA | 6.5nC @ 4.5V | 460pF @ 10V | 4.5V | ±8V |
