Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIS447DN-T1-GE3
Per Unit
$1.00
RFQ
3,737
Ships today + free overnight shipping
Vishay Siliconix MOSFET P-CH 20V 18A POWERPAK1212 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 52W (Tc) P-Channel - 20V 18A (Tc) 7.1 mOhm @ 20A, 10V 1.2V @ 250µA 181nC @ 10V 5590pF @ 10V 2.5V, 10V ±12V
SI7615ADN-T1-GE3
Per Unit
$0.81
RFQ
831
Ships today + free overnight shipping
Vishay Siliconix MOSFET P-CH 20V 35A 1212-8S TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.7W (Ta), 52W (Tc) P-Channel - 20V 35A (Tc) 4.4 mOhm @ 20A, 10V 1.5V @ 250µA 183nC @ 10V 5590pF @ 10V 2.5V, 10V ±12V
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