- Manufacture :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
1,425
Ships today + free overnight shipping
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Nexperia USA Inc. | MOSFET P-CH 20V 7.2A 6DFN | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-DFN2020MD (2x2) | 1.7W (Ta), 12.5W (Tc) | P-Channel | - | 20V | 7.2A (Ta) | 22.5 mOhm @ 7.2A, 4.5V | 900mV @ 250µA | 43.2nC @ 4.5V | 2890pF @ 10V | 1.8V, 4.5V | ±12V | ||
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3,153
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 20V 20A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 20A (Ta) | 4.4 mOhm @ 20A, 10V | 2.45V @ 250µA | 33nC @ 4.5V | 2890pF @ 10V | 4.5V, 10V | ±20V |
