- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,783
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET P-CH 20V 2A 8-SOIC | LITTLE FOOT® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta), 3.1W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 2A (Tc) | 215 mOhm @ 2.5A, 4.5V | 1.5V @ 250µA | 8nC @ 10V | 210pF @ 10V | 2.5V, 4.5V | ±12V | |||
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725
Ships today + free overnight shipping
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Diodes Incorporated | MOSFET P-CH 20V 2.5A U-WLB1510-6 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, WLBGA | U-WLB1510-6 | 920mW (Ta) | P-Channel | - | 20V | 2.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 2.9nC @ 4.5V | 210pF @ 10V | 1.5V, 4.5V | ±8V | |||
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913
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE PCH | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 1.2W (Ta) | P-Channel | - | 20V | 2A (Ta) | 110 mOhm @ 2A, 10V | 1.2V @ 1mA | 5.1nC @ 4.5V | 210pF @ 10V | 1.8V, 10V | ±12V |
