Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
DMN2027LK3-13
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RFQ
1,627
Ships today + free overnight shipping
Diodes Incorporated MOSFET N-CH 20V 11.6A DPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3 2.14W (Ta) N-Channel 20V 11.6A (Ta) 21 mOhm @ 20A, 10V 2V @ 250µA 9.1nC @ 4.5V 857pF @ 10V 2.5V, 10V ±12V
DMG3413L-7
Per Unit
$0.52
RFQ
2,953
Ships today + free overnight shipping
Diodes Incorporated MOSFET P-CH 20V 3A SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 700mW (Ta) P-Channel 20V 3A (Ta) 95 mOhm @ 3A, 4.5V 1.3V @ 250µA 9nC @ 4.5V 857pF @ 10V 1.8V, 4.5V ±8V
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