- Manufacture :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,730
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Diodes Incorporated | MOSFET N-CH 20V 1.73A 3UDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UDFN | X1-DFN1212-3 | 470mW (Ta) | N-Channel | 20V | 1.21A (Ta) | 200 mOhm @ 900mA, 4.5V | 950mV @ 250µA | 2nC @ 4.5V | 67.62pF @ 25V | 1.5V, 4.5V | ±8V | ||
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1,138
Ships today + free overnight shipping
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Diodes Incorporated | MOSFET N-CH 20V 1.73A 3UDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UDFN | X1-DFN1212-3 | 470mW (Ta) | N-Channel | 20V | 1.21A (Ta) | 200 mOhm @ 900mA, 4.5V | 950mV @ 250µA | 2nC @ 4.5V | 67.62pF @ 25V | 1.5V, 4.5V | ±8V | |||
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2,822
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Rohm Semiconductor | MOSFET N-CH 20V 2A TUMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 320mW (Ta) | N-Channel | 20V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 180pF @ 10V | 1.5V, 4.5V | ±10V | |||
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3,661
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Rohm Semiconductor | MOSFET N-CH 20V 2A TSMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 540mW (Ta) | N-Channel | 20V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 180pF @ 10V | 1.5V, 4.5V | ±10V |
