Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RUF020N02TL
Per Unit
$0.54
RFQ
2,822
Ships today + free overnight shipping
Rohm Semiconductor MOSFET N-CH 20V 2A TUMT3 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads TUMT3 320mW (Ta) N-Channel 20V 2A (Ta) 105 mOhm @ 2A, 4.5V 1V @ 1mA 2nC @ 4.5V 180pF @ 10V 1.5V, 4.5V ±10V
RUR020N02TL
Per Unit
$0.50
RFQ
3,661
Ships today + free overnight shipping
Rohm Semiconductor MOSFET N-CH 20V 2A TSMT3 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-96 TSMT3 540mW (Ta) N-Channel 20V 2A (Ta) 105 mOhm @ 2A, 4.5V 1V @ 1mA 2nC @ 4.5V 180pF @ 10V 1.5V, 4.5V ±10V
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