Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RAL025P01TCR
Per Unit
$0.56
RFQ
2,176
Ships today + free overnight shipping
Rohm Semiconductor MOSFET P-CH 12V 2.5A TUMT6 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads TUMT6 320mW (Ta) P-Channel 12V 2.5A (Ta) 62 mOhm @ 2.5A, 4.5V 1V @ 1mA 16nC @ 4.5V 2000pF @ 6V 1.5V, 4.5V -8V
RW1A025APT2CR
Per Unit
$0.55
RFQ
1,745
Ships today + free overnight shipping
Rohm Semiconductor MOSFET P-CH 12V 2.5A WEMT6 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 6-WEMT 400mW (Ta) P-Channel 12V 2.5A (Ta) 62 mOhm @ 2.5A, 4.5V 1V @ 1mA 16nC @ 4.5V 2000pF @ 6V 1.5V, 4.5V -8V
RQ5A030APTL
Per Unit
$0.50
RFQ
691
Ships today + free overnight shipping
Rohm Semiconductor MOSFET P-CH 12V 3A TSMT3 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-96 TSMT3 1W (Ta) P-Channel 12V 3A (Ta) 62 mOhm @ 3A, 4.5V 1V @ 1mA 16nC @ 4.5V 2000pF @ 6V 1.5V, 4.5V -8V
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