Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RQ1C065UNTR
Per Unit
$0.63
RFQ
3,452
Ships today + free overnight shipping
Rohm Semiconductor MOSFET N-CH 20V 6.5A TSMT8 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead TSMT8 700mW (Ta) N-Channel 20V 6.5A (Ta) 22 mOhm @ 6.5A, 4.5V 1V @ 1mA 11nC @ 4.5V 870pF @ 10V 1.5V, 4.5V ±10V
RT1C060UNTR
Per Unit
$0.48
RFQ
1,397
Ships today + free overnight shipping
Rohm Semiconductor MOSFET N-CH 20V 6A TSST8 - Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead 8-TSST 650mW (Ta) N-Channel 20V 6A (Ta) 28 mOhm @ 6A, 4.5V 1V @ 1mA 11nC @ 4.5V 870pF @ 10V 1.5V, 4.5V ±10V
Page 1 / 1