Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
HAT2140H-EL-E
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RFQ
1,173
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Renesas Electronics America MOSFET N-CH 100V 25A 5LFPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 30W (Tc) N-Channel 100V 25A (Ta) 16 mOhm @ 12.5A, 10V 105nC @ 10V 6500pF @ 10V 7V, 10V ±20V
HAT2141H-EL-E
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RFQ
1,983
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Renesas Electronics America MOSFET N-CH 100V 15A 5LFPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 20W (Tc) N-Channel 100V 15A (Ta) 27.5 mOhm @ 7.5A, 10V 46nC @ 10V 3200pF @ 10V 7V, 10V ±20V
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