- Series :
- Package / Case :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,320
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 1W (Ta) | N-Channel | - | 20V | 800mA (Ta) | 57 mOhm @ 800mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 177pF @ 10V | 1.2V, 4.5V | ±8V | |||
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3,147
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET P-CHANNEL 12V 4.8A ES6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 | 700mW (Ta) | P-Channel | - | 12V | 4.8A (Ta) | 32 mOhm @ 3.5A, 4.5V | 1V @ 1mA | 12.7nC @ 4.5V | 1040pF @ 12V | 1.5V, 4.5V | ±8V | |||
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3,840
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.4A CST3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-101, SOT-883 | CST3 | 500mW (Ta) | P-Channel | - | 20V | 1.4A (Ta) | 390 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1.6nC @ 4.5V | 100pF @ 10V | 1.2V, 4.5V | ±8V |
