Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TK380P65Y,RQ
Per Unit
$0.57
RFQ
2,424
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N-CHANNEL 650V 9.7A DPAK DTMOSV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 80W (Tc) N-Channel - 650V 9.7A (Tc) 380 mOhm @ 4.9A, 10V 4V @ 360µA 20nC @ 10V 590pF @ 300V 10V ±30V
TK380P60Y,RQ
Per Unit
$0.50
RFQ
677
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N-CHANNEL 600V 9.7A DPAK DTMOSV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 30W (Tc) N-Channel - 600V 9.7A (Tc) 380 mOhm @ 4.9A, 10V 4V @ 360µA 20nC @ 10V 590pF @ 300V 10V ±30V
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