- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
11 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,992
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Infineon Technologies | MOSFET N-CH 550V 7.1A TO-252 | CoolMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 66W (Tc) | N-Channel | - | 550V | 7.1A (Tc) | 520 mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | 680pF @ 100V | 10V | ±20V | ||
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3,271
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Infineon Technologies | MOSFET N-CH 600V 6.8A TO-252 | CoolMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 66W (Tc) | N-Channel | - | 600V | 6.8A (Tc) | 520 mOhm @ 3.8A, 10V | 3.5V @ 250µA | 31nC @ 10V | 630pF @ 100V | 10V | ±20V | ||
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3,026
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 60V 46A TO252 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.5W (Ta), 150W (Tc) | N-Channel | - | 60V | 14A (Ta), 46A (Tc) | 6.8 mOhm @ 20A, 10V | 3.5V @ 250µA | 75nC @ 10V | 4050pF @ 30V | 10V | ±20V | |||
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980
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Infineon Technologies | MOSFET N-CH 600V 6.8A TO-252 | CoolMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 66W (Tc) | N-Channel | - | 600V | 6.8A (Tc) | 520 mOhm @ 3.8A, 10V | 3.5V @ 250µA | 31nC @ 10V | 630pF @ 100V | 10V | ±20V | ||
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882
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ON Semiconductor | MOSFET N-CH 40V 100A DPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 4W (Ta), 107W (Tc) | N-Channel | - | 40V | 24A (Ta), 123A (Tc) | 3.7 mOhm @ 50A, 10V | 3.5V @ 250µA | 100nC @ 10V | 4760pF @ 25V | 10V | ±20V | |||
,%20SC-63.jpg)
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2,417
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Vishay Siliconix | MOSFET N-CH 40V 50A TO-252 | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 71W (Tc) | N-Channel | - | 40V | 50A (Tc) | 5.6 mOhm @ 20A, 10V | 3.5V @ 250µA | 85nC @ 10V | 4000pF @ 25V | 10V | ±20V | |||
,%20SC-63.JPG)
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1,978
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ON Semiconductor | MOSFET N CH 600V 7.4A DPAK | SuperFET® II | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 89W (Tc) | N-Channel | - | 600V | 7.4A (Tc) | 600 mOhm @ 3.7A, 10V | 3.5V @ 250µA | 26nC @ 10V | 1120pF @ 25V | 10V | ±20V | |||
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1,438
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Vishay Siliconix | MOSFET N-CH 40V 50A TO252AA | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 71W (Tc) | N-Channel | - | 40V | 50A (Tc) | 5.6 mOhm @ 20A, 10V | 3.5V @ 250µA | 85nC @ 10V | 4000pF @ 25V | 10V | ±20V | |||
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2,483
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ON Semiconductor | MOSFET N CH 600V 10.2A DPAK | SuperFET® II | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 106W (Tc) | N-Channel | - | 600V | 10.2A (Tc) | 380 mOhm @ 5A, 10V | 3.5V @ 250µA | 45nC @ 10V | 1770pF @ 25V | 10V | ±20V | |||
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2,272
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ON Semiconductor | MOSFET N-CH 600V 4.5A TO-252-3 | SuperFET® II | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 52W (Tc) | N-Channel | - | 600V | 4.5A (Tc) | 900 mOhm @ 2.3A, 10V | 3.5V @ 250µA | 17nC @ 10V | 720pF @ 25V | 10V | ±20V | |||
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2,727
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 6.8A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 6.8A (Ta) | 800 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V |
