Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF9540NSTRRPBF
Per Unit
$0.75
RFQ
1,785
Ships today + free overnight shipping
Infineon Technologies MOSFET P-CH 100V 23A D2PAK HEXFET® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 110W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V 1450pF @ 25V 10V ±20V
NTMFS5H414NLT1G
Per Unit
$1.58
RFQ
3,288
Ships today + free overnight shipping
ON Semiconductor T8 40V LOW COSS - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN, 5 Leads 5-DFN (5x6) (8-SOFL) 3.1W (Ta), 110W (Tc) N-Channel - 40V 35A (Ta), 210A (Tc) 1.4 mOhm @ 20A, 10V 2V @ 250µA 75nC @ 10V 4550pF @ 20V 4.5V, 10V ±20V
IRF9540NSTRLPBF
Per Unit
$0.75
RFQ
3,104
Ships today + free overnight shipping
Infineon Technologies MOSFET P-CH 100V 23A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 110W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V 1450pF @ 25V 10V ±20V
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