Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
Per Unit
$0.34
RFQ
3,802
Ships today + free overnight shipping
ON Semiconductor MOSFET P-CHANNEL 30V 27A ATPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 ATPAK 36W (Tc) P-Channel 30V 27A (Ta) 30 mOhm @ 13A, 10V 2.6V @ 1mA 18.5nC @ 10V 875pF @ 10V 4.5V, 10V ±20V
ATP101-TL-H
Per Unit
$0.24
RFQ
3,542
Ships today + free overnight shipping
ON Semiconductor MOSFET P-CH 30V 25A ATPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount ATPAK (2 leads+tab) ATPAK 30W (Tc) P-Channel 30V 25A (Ta) 30 mOhm @ 13A, 10V - 18.5nC @ 10V 875pF @ 10V 4.5V, 10V ±20V
Page 1 / 1