Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPCP8004(TE85L,F)
GET PRICE
RFQ
2,620
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N-CH 30V 8.3A PS-8 U-MOSIV Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead PS-8 (2.9x2.4) 840mW (Ta) N-Channel - 30V 8.3A (Ta) 8.5 mOhm @ 4.2A, 10V 2.5V @ 1mA 26nC @ 10V 1270pF @ 10V 4.5V, 10V ±20V
TPCP8005-H(TE85L,F
GET PRICE
RFQ
1,139
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N-CH 30V 11A PS-8 U-MOSV-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead PS-8 (2.9x2.4) 840mW (Ta) N-Channel - 30V 11A (Ta) 12.9 mOhm @ 5.5A, 10V 2.5V @ 1mA 20nC @ 10V 2150pF @ 10V 4.5V, 10V ±20V
Page 1 / 1