- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,736
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Infineon Technologies | MOSFET N-CH 30V 20A PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.8W (Ta), 37W (Tc) | N-Channel | - | 30V | 20A (Ta), 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.35V @ 50µA | 27nC @ 10V | 1797pF @ 25V | 4.5V, 10V | ±20V | ||
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1,727
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Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | |||
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1,670
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V |
