- Manufacture :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,216
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NXP USA Inc. | MOSFET N-CH 30V QFN3333 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 41W (Tc) | N-Channel | - | 30V | 21A (Tc) | 13 mOhm @ 5A, 10V | 2.15V @ 1mA | 12.2nC @ 10V | 768pF @ 15V | 4.5V, 10V | ±20V | ||
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2,785
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Vishay Siliconix | MOSFET N-CH 30V 16A POWERPAK1212 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 41W (Tc) | N-Channel | Schottky Diode (Body) | 30V | 16A (Tc) | 9.5 mOhm @ 10A, 10V | 2.3V @ 250µA | 30.5nC @ 10V | 1025pF @ 15V | 4.5V, 10V | ±20V | |||
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1,460
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Nexperia USA Inc. | MOSFET N-CH 30V 30A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 41W (Tc) | N-Channel | - | 30V | 30A (Tc) | 22.6 mOhm @ 5A, 10V | 2.15V @ 1mA | 9nC @ 10V | 447pF @ 15V | 4.5V, 10V | ±20V |
