1 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.2A UFM | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | 30V | 2.2A (Ta) | 100 mOhm @ 500mA, 4.5V | 1.1V @ 100µA | - | 245pF @ 10V | 2.5V, 4.5V | ±12V |
