- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 11.4 mOhm @ 6.5A, 10V (1)
- 11.4 mOhm @ 8A, 10V (1)
- 11.6 mOhm @ 6.5A, 10V (1)
- 16.9 mOhm @ 6.5A, 10V (1)
- 4 mOhm @ 20A, 10V (1)
- 4.2 mOhm @ 11.5A, 10V (1)
- 4.3 mOhm @ 20A, 10V (1)
- 6 mOhm @ 13.5A, 10V (1)
- 6 mOhm @ 19A, 10V (1)
- 6.2 mOhm @ 9A, 10V (1)
- 6.3 mOhm @ 10A, 10V (1)
- 7.5 mOhm @ 25A, 10V (1)
- 8 mOhm @ 11A, 10V (1)
- 8.2 mOhm @ 10A, 10V (1)
- 9 mOhm @ 7.5A, 10V (1)
- 9.7 mOhm @ 22.5A, 10V (1)
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
16 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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951
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON-ADV | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 18W (Tc) | N-Channel | - | 30V | 13A (Ta) | 11.4 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 20nC @ 10V | 1350pF @ 10V | 4.5V, 10V | ±20V | ||
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966
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A DPAK-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | - | N-Channel | - | 30V | 45A (Ta) | 9.7 mOhm @ 22.5A, 10V | 2.3V @ 200µA | 25nC @ 10V | 1500pF @ 10V | 4.5V, 10V | ±20V | ||
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1,100
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSVI-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8 mOhm @ 11A, 10V | 2.3V @ 200µA | 27nC @ 10V | 2200pF @ 10V | 4.5V, 10V | ±20V | ||
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1,333
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 20A 8TSON-ADV | U-MOSVIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 20A (Ta) | 6.3 mOhm @ 10A, 10V | 2.3V @ 200µA | 24nC @ 10V | 1370pF @ 15V | 4.5V, 10V | ±20V | |||
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693
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 15A 8SOP | U-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Ta) | N-Channel | - | 30V | 15A (Ta) | 9 mOhm @ 7.5A, 10V | 2.3V @ 200µA | 25nC @ 10V | 1800pF @ 10V | 4.5V, 10V | ±20V | |||
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3,315
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 20A 8SOP-ADV | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 32W (Tc) | N-Channel | - | 30V | 20A (Ta) | 8.2 mOhm @ 10A, 10V | 2.3V @ 200µA | 23nC @ 10V | 1900pF @ 10V | 4.5V, 10V | ±20V | |||
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3,539
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 16A 8SOP-ADV | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 25W (Tc) | N-Channel | - | 30V | 16A (Ta) | 11.4 mOhm @ 8A, 10V | 2.3V @ 200µA | 20nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
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2,254
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON | U-MOSVI-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 13A (Ta) | 16.9 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | ||
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3,286
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8SOP | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Ta) | N-Channel | - | 30V | 13A (Ta) | 11.6 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 20nC @ 10V | 1350pF @ 10V | 4.5V, 10V | ±20V | |||
|
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2,852
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 38A 8SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 34W (Tc) | N-Channel | - | 30V | 38A (Tc) | 6 mOhm @ 19A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | |||
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3,264
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 23A 8TSON-ADV | U-MOSVIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 23A (Ta) | 4.2 mOhm @ 11.5A, 10V | 2.3V @ 200µA | 24nC @ 10V | 1370pF @ 15V | 4.5V, 10V | ±20V | |||
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3,667
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 50A DP TO252-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 47W (Tc) | N-Channel | - | 30V | 50A (Ta) | 7.5 mOhm @ 25A, 10V | 2.3V @ 200µA | 25.3nC @ 10V | 1700pF @ 10V | 4.5V, 10V | ±20V | |||
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1,578
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 19A 8SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Tc) | N-Channel | - | 30V | 19A (Ta) | 6.2 mOhm @ 9A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
3,870
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 27A 8TSON-ADV | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 32W (Tc) | N-Channel | - | 30V | 27A (Tc) | 6 mOhm @ 13.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | |||
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645
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 34W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | |||
|
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3,674
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 36W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V |