- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,409
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Vishay Siliconix | MOSFET N-CH 30V 110A D2PAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 3.75W (Ta), 120W (Tc) | N-Channel | - | 30V | 110A (Tc) | 4.2 mOhm @ 20A, 10V | 3V @ 250µA | 60nC @ 4.5V | 5100pF @ 25V | 4.5V, 10V | ±20V | ||
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2,825
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Infineon Technologies | MOSFET N-CH 30V 80A TO263-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 94W (Tc) | N-Channel | - | 30V | 80A (Tc) | 3.3 mOhm @ 80A, 10V | 2.2V @ 45µA | 75nC @ 10V | 5100pF @ 25V | 4.5V, 10V | ±16V | |||
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3,274
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Infineon Technologies | MOSFET N-CH 30V 90A TO252-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 94W (Tc) | N-Channel | - | 30V | 90A (Tc) | 3.3 mOhm @ 90A, 10V | 2.2V @ 45µA | 75nC @ 10V | 5100pF @ 25V | 4.5V, 10V | ±16V |
