- Part Status :
- Gate Charge (Qg) (Max) @ Vgs :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,173
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Infineon Technologies | MOSFET N-CH 30V 27A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 27A (Ta), 150A (Tc) | 2.5 mOhm @ 27A, 10V | 2.35V @ 100µA | 54nC @ 4.5V | 4404pF @ 15V | 4.5V, 10V | ±20V | ||
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3,687
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Infineon Technologies | MOSFET N-CH 30V 27A MX | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 27A (Ta), 150A (Tc) | 2.5 mOhm @ 27A, 10V | 2.35V @ 100µA | 42nC @ 4.5V | 4404pF @ 15V | 4.5V, 10V | ±20V | ||
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1,058
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Infineon Technologies | MOSFET N-CH 30V 27A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 27A (Ta), 150A (Tc) | 2.5 mOhm @ 27A, 10V | 2.35V @ 100µA | 54nC @ 4.5V | 4404pF @ 15V | 4.5V, 10V | ±20V | |||
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2,623
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Infineon Technologies | MOSFET N-CH 30V 27A MX | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 27A (Ta), 150A (Tc) | 2.5 mOhm @ 27A, 10V | 2.35V @ 100µA | 42nC @ 4.5V | 4404pF @ 15V | 4.5V, 10V | ±20V |
