- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,593
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 2.2A PS-8 | U-MOSIII-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | 100V | 2.2A (Ta) | 180 mOhm @ 1.1A, 10V | 2.3V @ 1mA | 7.5nC @ 10V | 360pF @ 10V | 4.5V, 10V | ±20V | ||
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1,621
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Panasonic Electronic Components | MOSFET N-CH 20V 2.2A WSSMINI6 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | WSSMini6-F1 | 540mW (Ta) | N-Channel | 20V | 2.2A (Ta) | 105 mOhm @ 1A, 4V | 1.3V @ 1mA | - | 280pF @ 10V | 2.5V, 4V | ±10V | ||
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973
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Panasonic Electronic Components | MOSFET N-CH 20V 2.2A WSSMINI6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | WSSMini6-F1 | 540mW (Ta) | N-Channel | 20V | 2.2A (Ta) | 105 mOhm @ 1A, 4V | 1.3V @ 1mA | - | 280pF @ 10V | 1.8V, 4V | ±10V |
