- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,593
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 2.2A PS-8 | U-MOSIII-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 100V | 2.2A (Ta) | 180 mOhm @ 1.1A, 10V | 2.3V @ 1mA | 7.5nC @ 10V | 360pF @ 10V | 4.5V, 10V | ±20V | ||
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3,963
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ON Semiconductor | MOSFET N-CH 100V 2.2A 6MLP | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 2.4W (Ta) | N-Channel | - | 100V | 2.2A (Ta) | 243 mOhm @ 2.2A, 10V | 3V @ 250µA | 3nC @ 10V | 163pF @ 50V | 4.5V, 10V | ±20V | |||
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600
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Vishay Siliconix | MOSFET N-CH 150V 2.2A 1212-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.5W (Ta) | N-Channel | - | 150V | 2.2A (Ta) | 135 mOhm @ 3.4A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V | |||
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1,017
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Vishay Siliconix | MOSFET N-CH 150V 2.2A 1212-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.5W (Ta) | N-Channel | - | 150V | 2.2A (Ta) | 135 mOhm @ 3.4A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V | |||
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1,833
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Texas Instruments | MOSFET N-CH 60V 2.2A PICOSTAR | FemtoFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-PICOSTAR | 500mW (Ta) | N-Channel | - | 60V | 2.2A (Ta) | 65 mOhm @ 1A, 10V | 2.2V @ 250µA | 14nC @ 10V | 777pF @ 30V | 4.5V, 10V | ±20V | |||
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1,602
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Diodes Incorporated | MOSFET N-CH 30V 3.3A SOT89 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 | 970mW (Ta) | N-Channel | - | 30V | 2.2A (Ta) | 120 mOhm @ 2.5A, 10V | 1V @ 250µA | 5nC @ 10V | 186pF @ 25V | 4.5V, 10V | ±20V | |||
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2,059
Ships today + free overnight shipping
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Texas Instruments | MOSFET N-CH 60V 2.2A PICOSTAR | FemtoFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-PICOSTAR | 500mW (Ta) | N-Channel | - | 60V | 2.2A (Ta) | 65 mOhm @ 1A, 10V | 2.2V @ 250µA | 14nC @ 10V | 777pF @ 30V | 4.5V, 10V | ±20V |
