- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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941
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Infineon Technologies | MOSFET N-CH 100V 1.2A SOT223-4 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.2A (Ta) | 600 mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | 152.7pF @ 25V | 4.5V, 10V | ±20V | ||
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2,530
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Infineon Technologies | MOSFET N-CH 100V 1.1A SOT-223 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.2A (Ta) | 600 mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | 152.7pF @ 25V | 4.5V, 10V | ±20V | |||
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3,291
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.2A UFM | π-MOSVI | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 310 mOhm @ 600mA, 10V | 2.3V @ 100µA | - | 36pF @ 10V | 4V, 10V | ±20V | ||
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3,151
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Infineon Technologies | MOSFET N-CH 100V 1.2A SOT-223 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.2A (Ta) | 600 mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | 152.7pF @ 25V | 4.5V, 10V | ±20V | |||
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1,444
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Diodes Incorporated | MOSFET N-CH 60V 1.2A SOT23-3 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 625mW (Ta) | N-Channel | - | 60V | 1.2A (Ta) | 250 mOhm @ 1.8A, 10V | 3V @ 250µA | 3.2nC @ 10V | 166pF @ 40V | 4.5V, 10V | ±20V | ||
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860
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Diodes Incorporated | MOSFET N-CH 60V 1.2A SOT23-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 625mW (Ta) | N-Channel | - | 60V | 1.2A (Ta) | 250 mOhm @ 1.8A, 10V | 3V @ 250µA | 3.2nC @ 10V | 166pF @ 40V | 4.5V, 10V | ±20V | |||
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2,631
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Vishay Siliconix | MOSFET N-CH 150V 1.2A 6-TSOP | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.14W (Ta) | N-Channel | - | 150V | 1.2A (Ta) | 375 mOhm @ 1.5A, 10V | 4V @ 250µA | 8nC @ 10V | - | 6V, 10V | ±20V | |||
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3,859
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Vishay Siliconix | MOSFET N-CH 150V 1.2A 6-TSOP | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.14W (Ta) | N-Channel | - | 150V | 1.2A (Ta) | 375 mOhm @ 1.5A, 10V | 4V @ 250µA | 8nC @ 10V | - | 6V, 10V | ±20V | |||
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601
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Infineon Technologies | MOSFET N-CH 30V 1.2A SOT-23 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | - | 30V | 1.2A (Ta) | 250 mOhm @ 910mA, 10V | 1V @ 250µA | 5nC @ 10V | 85pF @ 25V | 4.5V, 10V | ±20V |
