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- Vgs(th) (Max) @ Id :
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4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,087
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NXP USA Inc. | MOSFET N-CH 20V 5.9A SOT-23 | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 280mW (Tj) | N-Channel | 20V | 5.9A (Tc) | 37 mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 5.8nC @ 4.5V | 410pF @ 20V | 2.5V, 4.5V | ±12V | ||
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3,368
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Rohm Semiconductor | 1700V .75 OHM 6A SIC FET | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 57W (Tc) | N-Channel | 1700V | 5.9A (Tc) | 975 mOhm @ 1.7A, 18V | 4V @ 630µA | 17nC @ 18V | 275pF @ 800V | 18V | +22V, -6V | |||
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3,212
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Vishay Siliconix | MOSFET P-CH 30V 5.9A SOT-23 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 1.25W (Ta), 2.5W (Tc) | P-Channel | 30V | 5.9A (Tc) | 45 mOhm @ 4.2A, 10V | 2.5V @ 250µA | 21nC @ 10V | 590pF @ 15V | 4.5V, 10V | ±20V | |||
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1,329
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Vishay Siliconix | MOSFET P-CH 20V 5.9A TO-236 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236 | 1W (Ta), 1.7W (Tc) | P-Channel | 20V | 5.9A (Tc) | 32 mOhm @ 4A, 4.5V | 1V @ 250µA | 36nC @ 8V | - | 1.8V, 4.5V | ±8V |
