- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,396
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Infineon Technologies | MOSFET N-CH 60V 120A TO263-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 188W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | 10V | ±20V | |||
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1,273
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Infineon Technologies | MOSFET N-CH TO263-7 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 208W (Tc) | N-Channel | - | 80V | 160A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 150µA | 112nC @ 10V | 7750pF @ 25V | 10V | ±20V | |||
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1,691
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 60V 120A TO263-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 167W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 120µA | 160nC @ 10V | 13150pF @ 25V | 10V | ±20V |
