Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHT6N06LT,135
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RFQ
1,637
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NXP USA Inc. MOSFET N-CH 55V 2.5A SOT223 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.8W (Ta), 8.3W (Tc) N-Channel 55V 2.5A (Ta) 150 mOhm @ 5A, 5V 2V @ 1mA 4.5nC @ 5V 330pF @ 25V 5V ±13V
BUK98150-55,135
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RFQ
1,928
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NXP USA Inc. MOSFET N-CH 55V 5.5A SOT-223 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 8.3W (Tc) N-Channel 55V 5.5A (Tc) 150 mOhm @ 5A, 5V 2V @ 1mA - 330pF @ 25V 5V ±10V
BUK98150-55/CUF
Per Unit
$0.13
RFQ
3,315
Ships today + free overnight shipping
Nexperia USA Inc. MOSFET N-CH 55V 5.5A SOT223 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 8.3W (Tc) N-Channel 55V 5.5A (Tc) 150 mOhm @ 5A, 5V 2V @ 1mA - 330pF @ 25V 5V ±10V
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