Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
Per Unit
$2.07
RFQ
2,399
Ships today + free overnight shipping
ON Semiconductor MOSFET P-CHANNEL 60V 120A ATPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 ATPAK 108W (Tc) P-Channel 60V 120A (Ta) 6.5 mOhm @ 50A, 10V 2.6V @ 1mA 250nC @ 10V 13000pF @ 20V 4.5V, 10V ±20V
ATP304-TL-H
Per Unit
$1.45
RFQ
3,725
Ships today + free overnight shipping
ON Semiconductor MOSFET P-CH 60V 100A ATPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount ATPAK (2 leads+tab) ATPAK 90W (Tc) P-Channel 60V 100A (Ta) 6.5 mOhm @ 50A, 10V - 250nC @ 10V 13000pF @ 20V 4.5V, 10V ±20V
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