Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
AOB11N60L
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RFQ
2,287
Ships today + free overnight shipping
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 11A TO263 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 272W (Tc) N-Channel 600V 11A (Tc) 700 mOhm @ 5.5A, 10V 4.5V @ 250µA 37nC @ 10V 1990pF @ 25V 10V ±30V
RJK6013DPE-00#J3
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RFQ
2,125
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Renesas Electronics America MOSFET N-CH 600V 11A LDPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-83 4-LDPAK 100W (Tc) N-Channel 600V 11A (Ta) 700 mOhm @ 5.5A, 10V - 37.5nC @ 10V 1450pF @ 25V 10V ±30V
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