Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPB80N06S2H5ATMA1
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RFQ
3,031
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Infineon Technologies MOSFET N-CH 55V 80A TO263-3 OptiMOS™ Discontinued at Digi-Key Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 300W (Tc) N-Channel - 55V 80A (Tc) 5.2 mOhm @ 80A, 10V 4V @ 230µA 155nC @ 10V 4400pF @ 25V 10V ±20V
SPB80N06S2-H5
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RFQ
921
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Infineon Technologies MOSFET N-CH 55V 80A D2PAK OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 300W (Tc) N-Channel - 55V 80A (Tc) 5.5 mOhm @ 80A, 10V 4V @ 230µA 155nC @ 10V 5500pF @ 25V 10V ±20V
IPB100N06S3-03
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RFQ
1,583
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Infineon Technologies MOSFET N-CH 55V 100A D2PAK OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 300W (Tc) N-Channel - 55V 100A (Tc) 3 mOhm @ 80A, 10V 4V @ 230µA 480nC @ 10V 21620pF @ 25V 10V ±20V
IPB80N06S2H5ATMA2
Per Unit
$1.26
RFQ
724
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Infineon Technologies MOSFET N-CH 55V 80A TO263-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 300W (Tc) N-Channel - 55V 80A (Tc) 5.2 mOhm @ 80A, 10V 4V @ 230µA 155nC @ 10V 4400pF @ 25V 10V ±20V
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