- Manufacture :
- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,602
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Infineon Technologies | MOSFET N-CH 30V 6.5A 8-SOIC | FETKY™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 6.5A (Ta) | 29 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 4.5V, 10V | ±20V | ||
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1,236
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Infineon Technologies | MOSFET N-CH 30V 6.5A 8-SOIC | FETKY™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 6.5A (Ta) | 32 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 4.5V, 10V | ±20V | ||
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1,658
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Vishay Siliconix | MOSFET N-CH 30V 16A 8-SOIC | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5.7W (Tc) | N-Channel | - | 30V | 16A (Tc) | 12 mOhm @ 10A, 10V | 2.6V @ 250µA | 33nC @ 10V | 1535pF @ 15V | 4.5V, 10V | ±25V | |||
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1,538
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Vishay Siliconix | MOSFET N-CH 30V 16A 8-SOIC | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5.7W (Tc) | N-Channel | - | 30V | 16A (Tc) | 12 mOhm @ 10A, 10V | 2.6V @ 250µA | 33nC @ 10V | 1535pF @ 15V | 4.5V, 10V | ±25V | |||
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1,627
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Infineon Technologies | MOSFET N-CH 30V 6.5A 8-SOIC | FETKY™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 6.5A (Ta) | 32 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 4.5V, 10V | ±20V | ||
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619
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Vishay Siliconix | MOSFET N-CHANNEL 150V 18A 8SO | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 7.1W (Tc) | N-Channel | - | 150V | 18A (Tc) | 85 mOhm @ 10A, 10V | 4V @ 250µA | 33nC @ 10V | 1590pF @ 75V | 10V | ±20V |