- Operating Temperature :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
11 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,992
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STMicroelectronics | MOSFET N-CH 525V 6A DPAK | SuperFREDmesh3™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 90W (Tc) | N-Channel | 525V | 6A (Tc) | 1.15 Ohm @ 3A, 10V | 4.5V @ 50µA | 33nC @ 10V | 870pF @ 50V | 10V | ±30V | |||
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2,852
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STMicroelectronics | MOSFET N-CH 800V 16A | MDmesh™ K5 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | 800V | 16A (Tc) | 280 mOhm @ 8A, 10V | 5V @ 100µA | 33nC @ 10V | 1000pF @ 100V | 10V | ±30V | |||
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906
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Infineon Technologies | MOSFET N-CH 60V 50A TDSON-8 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 50W (Tc) | N-Channel | 60V | 50A (Tc) | 11 mOhm @ 50A, 10V | 4V @ 23µA | 33nC @ 10V | 2700pF @ 30V | 10V | ±20V | |||
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2,759
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ON Semiconductor | SUPERFET3 650V PQFN88 | SuperFET® III | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | Power88 | 139W (Tc) | N-Channel | 650V | 17A (Tc) | 180 mOhm @ 8.5A, 10V | 4.5V @ 1.8mA | 33nC @ 10V | 1350pF @ 400V | 10V | ±30V | |||
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3,717
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Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TSDSON-8 | 2.1W (Ta), 50W (Tc) | N-Channel | 60V | 20A (Tc) | 11 mOhm @ 20A, 10V | 4V @ 23µA | 33nC @ 10V | 2700pF @ 30V | 10V | ±20V | |||
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1,589
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Infineon Technologies | MOSFET P-CH 60V 18.6A TO252-3 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 80W (Tc) | P-Channel | 60V | 18.6A (Tc) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
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3,505
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Infineon Technologies | MOSFET P-CH 60V 2.9A SOT-223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | 60V | 2.9A (Ta) | 130 mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | 10V | ±20V | |||
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619
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Vishay Siliconix | MOSFET N-CHANNEL 150V 18A 8SO | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 7.1W (Tc) | N-Channel | 150V | 18A (Tc) | 85 mOhm @ 10A, 10V | 4V @ 250µA | 33nC @ 10V | 1590pF @ 75V | 10V | ±20V | |||
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2,174
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Vishay Siliconix | MOSFET P-CH 30V 8A 6-TSOP | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TA) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 2W (Ta), 4.2W (Tc) | P-Channel | 30V | 8A (Tc) | 34 mOhm @ 6.1A, 10V | 3V @ 250µA | 33nC @ 10V | 1000pF @ 15V | 10V | ±20V | |||
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2,208
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 32A 8-SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 61W (Tc) | N-Channel | 100V | 32A (Tc) | 8.8 mOhm @ 16A, 10V | 4V @ 500µA | 33nC @ 10V | 2800pF @ 50V | 10V | ±20V | |||
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3,437
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Nexperia USA Inc. | MOSFET N-CH 100V 42A LFPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 89W (Tc) | N-Channel | 100V | 42A (Tc) | 27.5 mOhm @ 15A, 10V | 4V @ 1mA | 33nC @ 10V | 1634pF @ 50V | 10V | ±20V |