- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
10 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,981
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Infineon Technologies | MOSFET N-CH 75V 30A DPAK | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | P-TO252-3 | 136W (Tc) | N-Channel | - | 75V | 30A (Tc) | 21.5 mOhm @ 25A, 10V | 4V @ 80µA | 57nC @ 10V | 1950pF @ 25V | 10V | ±20V | ||
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2,862
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NXP USA Inc. | MOSFET N-CH 25V 100A LFPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 141W (Tc) | N-Channel | - | 25V | 100A (Tc) | 2.05 mOhm @ 25A, 10V | 1.95V @ 1mA | 57nC @ 10V | 3504pF @ 12V | 4.5V, 10V | ±20V | ||
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1,871
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Infineon Technologies | MOSFET N-CH 55V 45A TO-263 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 65W (Tc) | N-Channel | - | 55V | 45A (Tc) | 15.4 mOhm @ 23A, 10V | 4V @ 30µA | 57nC @ 10V | 2980pF @ 25V | 10V | ±20V | ||
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2,726
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Infineon Technologies | MOSFET N CH 300V 19A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 210W (Tc) | N-Channel | - | 300V | 19A (Tc) | 185 mOhm @ 11A, 10V | 5V @ 150µA | 57nC @ 10V | 2340pF @ 25V | 10V | ±20V | |||
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1,328
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Infineon Technologies | MOSFET N-CH 75V 30A TO252-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 136W (Tc) | N-Channel | - | 75V | 30A (Tc) | 21.5 mOhm @ 50A, 10V | 4V @ 80µA | 57nC @ 10V | 1400pF @ 25V | 10V | ±20V | |||
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640
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STMicroelectronics | MOSFET N-CH 100V 120A H2PAK-2 | STripFET™ III | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | H2Pak-2 | 250W (Tc) | N-Channel | - | 100V | 120A (Tc) | 9.3 mOhm @ 60A, 10V | 4V @ 250µA | 57nC @ 10V | 3305pF @ 25V | 10V | ±20V | |||
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1,167
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Texas Instruments | MOSFET N-CH 100V 200A DDPAK-3 | NexFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | DDPAK/TO-263-3 | 250W (Tc) | N-Channel | - | 100V | 200A (Ta) | 5.6 mOhm @ 90A, 10V | 3.2V @ 250µA | 57nC @ 10V | 5060pF @ 50V | 6V, 10V | ±20V | |||
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1,674
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Texas Instruments | MOSFET N-CH 60V 200A D2PAK | NexFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | DDPAK/TO-263-3 | 250W (Tc) | N-Channel | - | 60V | 200A (Ta) | 4 mOhm @ 100A, 10V | 2.2V @ 250µA | 57nC @ 10V | 5070pF @ 30V | 4.5V, 10V | ±20V | |||
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3,387
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Nexperia USA Inc. | MOSFET N-CH 30V 100A LFPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 88W (Tc) | N-Channel | - | 30V | 100A (Tc) | 2.4 mOhm @ 15A, 10V | 2.15V @ 1mA | 57nC @ 10V | 3468pF @ 12V | 4.5V, 10V | ±20V | |||
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1,001
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Texas Instruments | MOSFET N-CH 100V TO-263-3 | NexFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | DDPAK/TO-263-3 | 250W (Tc) | N-Channel | - | 100V | 200A (Ta) | 5.6 mOhm @ 90A, 10V | 3.2V @ 250µA | 57nC @ 10V | 5060pF @ 50V | 6V, 10V | ±20V |