Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRLR3717TRRPBF
Per Unit
$0.52
RFQ
2,468
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 20V 120A DPAK HEXFET® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 89W (Tc) N-Channel 20V 120A (Tc) 4 mOhm @ 15A, 10V 2.45V @ 250µA 31nC @ 4.5V 2830pF @ 10V 4.5V, 10V ±20V
RZQ045P01TR
Per Unit
$0.24
RFQ
2,561
Ships today + free overnight shipping
Rohm Semiconductor MOSFET P-CH 12V 4.5A TSMT6 - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSMT6 (SC-95) 1.25W (Ta) P-Channel 12V 4.5A (Ta) 35 mOhm @ 4.5A, 4.5V 1V @ 1mA 31nC @ 4.5V 2450pF @ 6V 1.5V, 4.5V ±10V
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