- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,610
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Vishay Siliconix | MOSFET N-CHAN 60V POWERPAK SO-8 | TrenchFET® Gen IV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 5W (Ta), 62.5W (Tc) | N-Channel | - | 60V | 20.7A (Ta), 73A (Tc) | 5.8 mOhm @ 10A, 10V | 3.4V @ 250µA | 32nC @ 10V | 1490pF @ 30V | 7.5V, 10V | ±20V | ||||
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2,000
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CHAN 60V POWERPAK 1212- | TrenchFET® Gen IV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | 3.7W (Ta), 52W (Tc) | N-Channel | - | 60V | 17.4A (Ta), 65.3A (Tc) | 5.8 mOhm @ 10A, 10V | 3.4V @ 250µA | 32nC @ 10V | 1490pF @ 30V | 7.5V, 10V | ±20V |