Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
3,895
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 30A SOP-8 ADV - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel 30V 30A (Ta) 6.2 mOhm @ 15A, 10V 2.5V @ 1mA 34nC @ 10V 2846pF @ 10V 4.5V, 10V ±20V
TPC8032-H(TE12LQM)
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1,739
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 15A SOP8 2-6J1B - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) - N-Channel 30V 15A (Ta) 6.5 mOhm @ 7.5A, 10V 2.5V @ 1mA 33nC @ 10V 2846pF @ 10V - -
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