Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHD82NQ03LT,118
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RFQ
3,557
Ships today + free overnight shipping
NXP USA Inc. MOSFET N-CH 30V 75A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 136W (Tc) N-Channel - 30V 75A (Tc) 8 mOhm @ 25A, 10V 2.5V @ 1mA 16.7nC @ 5V 1620pF @ 25V 5V, 10V ±20V
IPB80N06S3L-06
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RFQ
2,761
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Infineon Technologies MOSFET N-CH 55V 80A TO-263 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 136W (Tc) N-Channel - 55V 80A (Tc) 5.6 mOhm @ 56A, 10V 2.2V @ 80µA 196nC @ 10V 9417pF @ 25V 5V, 10V ±16V
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