Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI4880DY-T1-GE3
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RFQ
638
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Vishay Siliconix MOSFET N-CH 30V 13A 8-SOIC TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel 30V - 8.5 mOhm @ 13A, 10V 1.8V @ 250µA 25nC @ 5V - 4.5V, 10V ±25V
SI4880DY-T1-E3
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RFQ
2,139
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 30V 13A 8-SOIC TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel 30V - 8.5 mOhm @ 13A, 10V 1.8V @ 250µA 25nC @ 5V - 4.5V, 10V ±25V
SI4800BDY-T1-GE3
Per Unit
$0.28
RFQ
1,388
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Vishay Siliconix MOSFET N-CH 30V 6.5A 8-SOIC TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.3W (Ta) N-Channel 30V 6.5A (Ta) 18.5 mOhm @ 9A, 10V 1.8V @ 250µA 13nC @ 5V - 4.5V, 10V ±25V
SI4800BDY-T1-E3
Per Unit
$0.28
RFQ
1,721
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 30V 6.5A 8-SOIC TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.3W (Ta) N-Channel 30V 6.5A (Ta) 18.5 mOhm @ 9A, 10V 1.8V @ 250µA 13nC @ 5V - 4.5V, 10V ±25V
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