- Series :
- Package / Case :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
976
Ships today + free overnight shipping
|
STMicroelectronics | MOSFET N-CH 800V 4.5A I2PAK | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 85W (Tc) | N-Channel | 800V | 4.5A (Tc) | 1.6 Ohm @ 2A, 10V | 5V @ 100µA | 7.5nC @ 10V | 255pF @ 100V | 10V | 30V | ||||
|
705
Ships today + free overnight shipping
|
STMicroelectronics | N-CHANNEL 900 V, 2.1 OHM TYP., 3 | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAK | 110W (Tc) | N-Channel | 900V | 6A (Tc) | 1.1 Ohm @ 3A, 10V | 5V @ 100µA | - | - | 10V | ±30V |